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CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

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CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

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CGHV96050F2 3.3V 20dB Gallium Nitride GaN High Electron Mobility Transistor HEMT

CGHV96050F2 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) on a Silicon Carbide (SiC) substrate. Its functions and applications are as follows: Functions High - frequency ...

Product Tags:

CGHV96050F2 Transistor HEMT

20dB Gallium Nitride GaN

3.3V High Electron Mobility Transistor

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